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Brand Name : onsemi
Model Number : FDMS86180
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 100 V
Current - Continuous Drain (Id) @ 25°C : 151A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 3.2mOhm @ 67A, 10V
Vgs(th) (Max) @ Id : 4V @ 370µA
Vgs (Max) : ±20V
FDMS86180 MOSFET Power Electronics N-Channel Shielded Gate PowerTrench 100 V 151 A 3.2 mΩ
N-Channel PowerTrench
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 2mOhm @ 80A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 169 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 10000 pF @ 40 V | |
FET Feature | - | |
Power Dissipation (Max) | 357W (Tj) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 8-HPSOF | |
Package / Case |
Features
Shielded Gate MOSFET Technology
Max rDS(on) = 3.2 mΩ at VGS = 10 V, ID = 67 A
Max rDS(on) = 7.9 mΩ at VGS = 6 V, ID = 33 A
50% Lower Qrr than Other MOSFET Suppliers
Lowers Switching Noise/EMI
MSL1 Robust Package Design
100% UIL Tested
RoHS Compliant
General Description
This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Applications
Primary DC-DC MOSFET
Synchronous Rectifier in DC-DC and AC-DC
Motor Drive
Solar
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FDMS86180 MOSFET Power Electronics N-Channel Shielded Gate PowerTrench 100 V 151 A 3.2 mΩ Images |