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Brand Name : onsemi
Model Number : NVMFS5C430NLAFT1G
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 40 V
Current - Continuous Drain (Id) @ 25°C : 38A (Ta), 200A (Tc)
Drive VoDrive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id : 2V @ 250µA
Vgs (Max) : ±20V
NVMFS5C430NLAFT1G MOSFET Power Electronics Single N-Channel 40 V 1.4 m 200 A Package 5-DFN
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 1.4mOhm @ 50A, 10V | |
Vgs(th) (Max) @ Id | 2V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 20 V | |
FET Feature | - | |
Power Dissipation (Max) | 3.8W (Ta), 110W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 5-DFN (5x6) (8-SOFL) | |
Package / Case |
Features
• Small Footprint (5x6 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• NVMFS5C430NLWF − Wettable Flank Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Features
• Shielded Gate MOSFET Technology
• Max rDS(on) = 4.2 m at VGS = 10 V, ID = 44 A
• Max rDS(on) = 12 m at VGS = 6 V, ID = 22 A
• ADD
• 50% lower Qrr than other MOSFET suppliers
• Lowers switching noise/EMI
• MSL1 robust package design
• 100% UIL tested
• RoHS Compliant
Applications
• Primary DC−DC MOSFET
• Synchronous Rectifier in DC−DC and AC−DC
• Motor Drive
• Solar
res
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NVMFS5C430NLAFT1G MOSFET Power Electronics Single N-Channel 40 V 1.4 m 200 A Package 5-DFN Images |