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Brand Name : onsemi
Model Number : FDS6681Z
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 30 V
Current - Continuous Drain (Id) @ 25°C : 20A (Ta)
Drive VoDrive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 4.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Vgs (Max) : ±25V
FDS6681Z MOSFET Power Electronics 30 Volt P-Channel PowerTrench® Package 8-SOIC30 Volt P-Channel PowerTrench®
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 4.6mOhm @ 20A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V | |
Vgs (Max) | ±25V | |
Input Capacitance (Ciss) (Max) @ Vds | 7540 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 8-SOIC | |
Package / Case |
General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench ® process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Features
• –20 A, –30 V. RDS(ON) = 4.6 mΩ @ V GS = –10 V
RDS(ON) = 6.5 mΩ @ V GS = –4.5 V
• Extended V GSS range (–25V) for battery applications
• HBM ESD protection level of 8kV typical (note 3)
• High performance trench technology for extremely low R DS(ON)
• High power and current handling capability
• Termination is Lead-free and RoHS Compliant
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FDS6681Z MOSFET Power Electronics 30 Volt P-Channel PowerTrench® Package 8-SOIC Images |