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Brand Name : onsemi
Model Number : FDC5612
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 60 V
Current - Continuous Drain (Id) @ 25°C : 4.3A (Ta)
Drive VoDrive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 55mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Vgs (Max) : ±20V
FDC5612 MOSFET Power Electronics N-Channel POWERTRENCH 60 V Package SOT-23
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 55mOhm @ 4.3A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 1.6W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | SuperSOT™-6 | |
Package / Case |
General Description
This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher
overall efficiency.
Features
• 4.3 A, 60 V. RDS(ON) = 0.055 @ VGS = 10 V
RDS(ON) = 0.064 @ VGS = 6 V
• Low Gate Charge (12.5 nC Typical)
• Fast Switching Speed
• High Performance Trench Technology for Extremely Low RDS(ON).
• SUPERSOTTM−6 Package: Small Footprint
(72% Smaller than Standard SO−8); Low Profile (1mm Thick).
• This is a Pb−Free and Halide Free Device
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FDC5612 MOSFET Power Electronics N-Channel POWERTRENCH 60 V Package SOT-23 Images |