FQT5P10TF MOSFET Power Electronics PackageTO-261-4 energy strength 1.05 Ω Avalanche Tested
| ET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
Features
• -1.0 A, -100 V, RDS(on)=1.05 Ω(Max.) @VGS=-10 V, ID=-0.5 A
• Low Gate Charge (Typ. 6.3 nC)
• Low Crss (Typ. 18 pF)
• 100% Avalanche Tested
description:
This p-channel enhancement mode power mosfet is produced using fairchild semiconductor®’s proprietary planar stripe and dmos technology. this advanced mosfet technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. these devices are suitable for switched mode power supplies, audio amplifier, dc motor control, and variable switching power application
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FQT5P10TF MOSFET Power Electronics PackageTO-261-4 energy strength 1.05 Ω Avalanche Tested Images
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