IRF5801TRPBF MOSFET Power Electronics
Product Description:
IRF5801TRPBF is a high power MOSFET power electronics device designed to provide efficient switching and high power performance in a wide range of applications. The device features a maximum drain source voltage of 100V, a maximum drain current of 15.8A, and a maximum power dissipation of 240W. The device also offers a maximum junction temperature of 175℃, an excellent RDS(on) of 1.4mΩ, and a maximum gate threshold voltage of 2.5V. This device is suitable for general purpose and automotive applications.
Features:
• Maximum drain source voltage: 100V
• Maximum drain current: 15.8A
• Maximum power dissipation: 240W
• Maximum junction temperature: 175℃
• RDS(on): 1.4mΩ
• Maximum gate threshold voltage: 2.5V
• Package: TO-220AB
• Suitable for general purpose and automotive applications
| Product Status | | |
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | | |
| Base Product Number | |
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IRF5801TRPBF Mosfet In Power Electronics High Performance Low Cost Images
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