IRFB4610PBF, 100V N-Channel MOSFET Power Electronics
Product Description:
The IRFB4610PBF is a 100V N-Channel MOSFET Power Electronics from International Rectifier. This device provides superior performance in a wide variety of applications. It features low on-state resistance and high switching speed, making it the perfect choice for high current, high frequency operation.
Features:
• Low on-state resistance
• High switching speed
• Low gate-source capacitance
• Low gate charge
• Low threshold voltage
• High blocking voltage
• Avalanche energy rated
• RoHS Compliant
Specifications:
• Drain-Source Voltage: 100V
• Continuous Drain Current: 44A
• Power Dissipation: 225W
• Drain-Source On-State Resistance: 3.7mΩ
• Gate-Source Voltage: ±20V
• Operating Junction Temperature: 175°C
• Storage Temperature: -55°C to +175°C
• Package Type: TO-263AB
| Product Status | | |
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | | |
| Base Product Number | |
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IRFB4610PBF Power Mosfet Ultra Low On Resistance high frequency operation Images
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