FDN359BN MOSFET Power Electronics TO-236-3 N-Channel Enhancement Mode Device
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The FDN359BN is an N-channel enhancement mode power MOSFET, designed for high-voltage switching applications. It has an integrated gate-source voltage (VGS) of -20V, a drain-source voltage (VDS) of 200V, and a continuous drain current (ID) of -3A. It is housed in a TO-236-3 package and features a fast switching speed and low on-state resistance. The MOSFET also has a very low input capacitance and output capacitance, making it ideal for high frequency applications. Additionally, the device has a low threshold voltage, making it suitable for switching applications. The FDN359BN is ideal for use in DC-DC converters, motor controls, and power inverters.
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FDN359BN MOSFET Power Electronics TO-236-3 N-Channel Enhancement Mode Device Images
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