NTMFS5C670NLT1G MOSFET Power
Electronics High Performance 8-PowerTDFN Optimal Efficiency Reliability
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The NTMFS5C670NLT1G is a PowerTDFN 8-lead low-thermal resistive, logic-level N-Channel MOSFET from ON Semiconductor. This device is optimized for low-voltage, low-current applications. It has an RDS(on) value of < 0.7 ohms and a continuous drain current of 670 mA, making it suitable for switch-mode power supplies and other power management applications. It also features fast switching times and ESD protection up to 4 kV. This MOSFET is RoHS compliant and halogen free, making it a reliable and safe choice for use in electronic systems.
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NTMFS5C670NLT1G MOSFET Power Electronics High Performance 8-PowerTDFN Optimal Efficiency Reliability Images
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