2V7002KT1G MOSFET Power Electronics
TO-236-3 N-Channel Enhancement Mode Transistor On Resistance Efficiency Applications
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
MOSFET Power Electronics 2V7002KT1G is a TO-236-3 package type MOSFET. It is a n-channel enhancement mode MOSFET, optimized for switching applications. It has a low on-resistance of 0.0068 ohms, which can reduce power losses in the circuit. It also has a maximum drain-source voltage of 200V and a maximum drain current of 2A. It has a high input impedance and ESD protection, making it suitable for use in high speed switching applications. The package is RoHS compliant, making it an environmentally friendly option. This device is perfect for use in power management and control applications.
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2V7002KT1G MOSFET Power Electronics TO-236-3 N-Channel Enhancement Mode Transistor On Resistance Efficiency Application Images
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