FDMS039N08B Power MOSFET Transistor High
Performance Low On-Resistance Ultra-Low Gate Charge Robust Switching Operation
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The FDMS039N08B is a 100V N-Channel MOSFET from Fairchild Semiconductor, featuring a maximum drain source voltage of 100V and a maximum drain current of 39A. It is designed for use in power management, load switching, and other high voltage applications. It features a low on-resistance and low gate charge, making it suitable for high frequency switching applications. It has a fast switching speed and excellent thermal stability, making it suitable for high power applications. The device has an ultra-low gate charge and an ultra-low on resistance, allowing it to operate at high efficiency in a wide range of switching applications. It is available in a TO-220 full-pack package.
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FDMS039N08B Power MOSFET Transistor High Performance Low On-Resistance Ultra-Low Gate Charge Robust Switching Operation Images
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