FDD86540 MOSFET Power Electronics High Quality TO-252-3 Maximum Efficiency Reliability
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The FDD86540 is a high-power N-Channel MOSFET featuring a TO-252-3 package. This device is designed to have low on-state resistance and high current capability. It has a high switching speed and is suitable for use in various power conversion applications, such as switching power supplies, DC/DC converters, motor drives and other high power switching circuits. The FDD86540 has a maximum drain source voltage of 500V and a maximum drain current of 60A. It also features a maximum power dissipation of 110W and an operating temperature range of -55°C to +150°C. Additionally, the FDD86540 is RoHS compliant and UL certified.
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FDD86540 MOSFET Power Electronics High Quality TO-252-3 Maximum Efficiency Reliability Images
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