NTR5103NT1G MOSFET Power Electronics TO-236-3 Device for High Power Applications
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | | |
| Base Product Number | |
ON Semiconductor NTR5103NT1G TO-236-3 Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Power Electronics provides high-performance, low-power solutions for a wide variety of applications. This NTR5103NT1G MOSFET device features high power efficiency, low on-resistance, and low gate charge for improved system performance. Its low on-resistance and gate charge makes it suitable for high-frequency switching applications. The NTR5103NT1G MOSFET offers high current-handling capability and fast switching speed to provide better overall system performance. The MOSFET is housed in a TO-236-3 package and comes with a thermal pad for enhanced thermal performance.With its low on-resistance and gate charge, the NTR5103NT1G MOSFET offers excellent system performance and efficiency. It is suitable for use in a wide range of power electronics applications such as power converters, DC/DC converters, motor drives, and switching power supplies.
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NTR5103NT1G MOSFET Power Electronics TO-236-3 Device for High Power Applications Images
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