NTR4003NT3G MOSFET Power Electronics TO-236-3 Device High Power Applications
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
1. The NTR4003NT3G is a P-channel logic level enhancement mode Field Effect Transistor (FET) from ON Semiconductor. This device is housed in a TO-236-3 surface-mount package, making it suitable for use in a wide range of applications. This FET is designed to operate efficiently in both high and low current applications, with a drain-source voltage of up to 20V.
2. The NTR4003NT3G is ideal for use in power management applications, such as DC-DC conversion, power switching, and other power electronics applications. This FET features an ultra-low gate charge, allowing for fast switching speeds and high power efficiency. Additionally, the device offers high immunity to noise, with ESD protection up to 2kV.
3. The NTR4003NT3G is RoHS compliant and offers easy integration into existing designs. This device is available in a wide range of package and pin configurations, allowing for easy customization to meet different design requirements. With its low on-resistance and high current capacity, this FET is an excellent choice for a variety of power management and power electronics applications.
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NTR4003NT3G MOSFET Power Electronics TO-236-3 Device High Power Applications Images
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