Product Listing:
SIHG22N60E-GE3 MOSFET
Features:
- 600V N-Channel MOSFET
- Highest efficiency and superior switching performance
- Low input capacitance and gate charge
- Low gate-source threshold voltage
- 100% avalanche tested
- RoHS compliant
Electrical Parameters:
- Drain-Source Voltage (Vds): 600V
- Drain Current (Id): 22A
- Drain-Source On-State Resistance (Rds): 0.026ohm
- Gate-Source Voltage (Vgs): ±20V
- Gate Threshold Voltage (Vth): 1.9V
- Continuous Drain Current (Id): 22A
- Power Dissipation (Pd): 229w
- Transistor Case Style: TO-220F
- No. of Pins: 3Pins
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How to buy >>>
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Service >>>
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SIHG22N60E-GE3 MOSFET Power Electronics: High-Performance Ultra-Low On-Resistance Low Gate Charge and Low Capacitance Images
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