Product Listing: Product: BSC047N08NS3GATMA1 MOSFET Features: • N-Channel Enhancement Mode • Logic Level Gate Drive • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Low Output Capacitance • ESD Protected • RoHS Compliant Specifications: • Drain-Source Voltage: 500V • Drain-Source On-Resistance: 0.07Ω • Gate-Source Voltage: ±20V • Gate-Threshold Voltage: 1.8V • Input Capacitance: 65pF • Output Capacitance: 10pF • Power Dissipation: 2W • Operating Temperature Range: -55°C to 150°C
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BSC047N08NS3GATMA1 MOSFET Power Electronics High-Performance Low-RDS(on) Switching Solutions Images
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